PART |
Description |
Maker |
W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors High Temperature TaNFilm垄莽 Chip Resistors High Temperature TaNFilm? Chip Resistors High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805 High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603 High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
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Welwyn Components Limited TT Electronics / Welwyn Welwyn Components, Ltd. Welwyn Components Limit...
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NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
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DB Lectro Inc
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AM27C1024-300DIB AM27C1024-350/BUA AM27C1024-205DC |
Constant Frequency Current Mode Step-Up DC/DC Controller in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C High Efficiency Monolithic Synchronous Step-Down Regulator; Package: MSOP; No of Pins: 8; Temperature Range: -40°C to 125°C Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C 150mA, Micropower, Low Noise, VLDO Linear Regulator; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C High Efficiency Thermoelectric Cooler Controller; Package: QFN; No of Pins: 32; Temperature Range: -40°C to 125°C High Efficiency Thermoelectric Cooler Controller; Package: SSOP; No of Pins: 28; Temperature Range: -40°C to 125°C Micropower, Regulated 3.3V/5V Charge Pump with Shutdown in SOT-23; Package: SOT; No of Pins: 6; Temperature Range: -40°C to 125°C 8-Channel, 12-Bit, 1.25Msps Sampling ADCs; Package: SSOP; No of Pins: 48; Temperature Range: 0°C to 70°C x16 EPROM x16存储 Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; No of Pins: 5; Temperature Range: -40°C to 125°C
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OlympicControls, Corp.
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MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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FREESCALE[Freescale Semiconductor, Inc]
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MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
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Motorola
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T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs High temperature 10 A sensitive TRIACs 600 V, 10 A, TRIAC, TO-220AB
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ST Microelectronics STMicroelectronics
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SM6HT24A SM6HT27A SM6HT36A SM6HT43A 6565 SM6HTXXA |
From old datasheet system HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS HIGH TEMPERATURE TRANSILTM FOR AUTOMOTIVE APPLICATIONS
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STMICROELECTRONICS[STMicroelectronics]
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EL2223 EL2223C EL2223J EL2223CJ EL2223L/883B EL222 |
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-SOIC Laser Diode Driver with Waveform Generator; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R 12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-TSSOP High Speed Operational Amplifier Dual, 500 MHz High Speed, Operational Amplifier
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Elantec Semiconductor
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DS1623 |
High Resolution Temperature Measurementwith Dallas Direct-to -digital Temperature Sensors(数字温度 DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), RECTANGULAR, SURFACE MOUNT
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Maxim Integrated Products, Inc.
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
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CHTA12-400 CHTB12-400 CHTB12-400PT CHTB12-600 CHTB |
High Temperature 150掳C Series TRIAC High Temperature 150°C Series TRIAC
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List of Unclassifed Manufacturers
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